NTJD4158CT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTJD4158CT1G
Datasheet:
Description:
MOSFETs SOT-363 SMD/SMT N-Channel, P-Channel number of channels:2 270 mW -20 V Continuous Drain Current (ID):880 mA 900 pC, 2.2 nC
| Parameter | Value |
|---|---|
| Length | 2.2 mm |
| Width | 1.35 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 1.5 Ω |
| Height | 1 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 2 |
| Current Rating | 250 mA |
| Max Power Dissipation | 270 mW |
| Power Dissipation | 270 mW |
| Threshold Voltage | 1.2 V |
| Number of Channels | 2 |
| Input capacitance | 33 pF |
| Continuous Drain Current (ID) | 880 mA |
| Rds On Max | 1.5 Ω |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 13.5 ns |
| Element Configuration | Dual |
| Fall Time | 3.5 ns |
| Rise Time | 6.5 ns |
| Gate Charge | 900 pC, 2.2 nC |
| Drain to Source Resistance | 1 Ω |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 800 mV, 450 mV |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
Stock: 6973
Distributors
pcbx
pcbxUnit Price$0.25050
Ext.Price$0.25050
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.25050 | $0.25050 |
| 10 | $0.13764 | $1.37640 |
| 50 | $0.12224 | $6.11200 |
| 100 | $0.10857 | $10.85700 |
| 500 | $0.08720 | $43.60000 |
| 1000 | $0.07130 | $71.30000 |
| 3000 | $0.06070 | $182.10000 |
| 5000 | $0.05006 | $250.30000 |
| 10000 | $0.04129 | $412.90000 |